Tin sulfide is an excellent candidate for the mass production of solar cells as it is composed of abundant and not toxic elements. We have prepared SnS polycrystalline films by a novel technique. This technology allows to transfer atoms from a target of SnS to the substrate due to the generation of plasma from the target, giving enough energy to have a good crystallization of the material also at low temperature. Ionized Jet deposition (IJD) is an improved Pulsed Electron Deposition technique in which a pulsed high power electron beam penetrates into the target resulting in a rapid evaporation of the material, and its transformation in plasma state. The non-equilibrium extraction (ablation) facilitates stoichiometric composition of the plasma. This is particularly advantageous in the case of complex, multicomponent materials.
|Titolo:||SnS by Ionized Jet Deposition for photovoltaic applications|
|Data di pubblicazione:||2017|
|Appare nelle tipologie:||04.01 Contributo in atti di convegno|