One of the key factors for the success of CdTe solar cells is the so-called “activation” treatment, consisting in depositing a CdCl 2 film on the CdTe layer and subsequent annealing it in air. Recent studies have found MgCl 2 as a good alternative. In this work we have studied devices (exceeding 14% efficiency) prepared by low-substrate temperature CdTe deposition and activated with MgCl 2 treatment (applied by wet deposition). The CdTe films recrystallized by MgCl 2 were analyzed in terms of X-ray diffraction, atomic force microscopy, photoluminescence measurement and compared with the standard CdCl 2 treated CdTe cells. Results show that different defects are detected for MgCl 2 treated sample. Moreover MgCl 2 treated cell does not need a post deposition treatment of the back contact to deliver high current density, showing that different electrical properties of the CdTe are registered.

Comparison of MgCl2and CdCl2 Activation Treatment for CDTE Solar Cells: Recrystallization and Defects

Artegiani, Elisa;Rimmaudo, Ivan;Piccinelli, Fabio;Romeo, Alessandro
2017-01-01

Abstract

One of the key factors for the success of CdTe solar cells is the so-called “activation” treatment, consisting in depositing a CdCl 2 film on the CdTe layer and subsequent annealing it in air. Recent studies have found MgCl 2 as a good alternative. In this work we have studied devices (exceeding 14% efficiency) prepared by low-substrate temperature CdTe deposition and activated with MgCl 2 treatment (applied by wet deposition). The CdTe films recrystallized by MgCl 2 were analyzed in terms of X-ray diffraction, atomic force microscopy, photoluminescence measurement and compared with the standard CdCl 2 treated CdTe cells. Results show that different defects are detected for MgCl 2 treated sample. Moreover MgCl 2 treated cell does not need a post deposition treatment of the back contact to deliver high current density, showing that different electrical properties of the CdTe are registered.
2017
978-1-5090-5605-7
CdTe
MgCl2
CdCl2
thin films
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/992076
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