(ZnSe)x(SnSe)1-x films were fabricated from ZnSe and SnSe precursors using chemical-molecular beam deposition (CMBD) method at a substrate temperature of 500°C. The structural and morphological properties of (ZnSe)0.1(SnSe)0.9 films have been studied. The data from the scanning electron microscope showed that the grain sizes of the films were 5-6 μm and the films had a close-packed polycrystalline structure. The results of X-ray diffraction analysis of the samples revealed that the films have an orthorhombic structure. Structural parameters of the obtained films are given.
Growth and characterization of (ZnSe)0.1(SnSe)0.9 films for use in thin film solar cells
Romeo A.;Artegiani E.;
2018-01-01
Abstract
(ZnSe)x(SnSe)1-x films were fabricated from ZnSe and SnSe precursors using chemical-molecular beam deposition (CMBD) method at a substrate temperature of 500°C. The structural and morphological properties of (ZnSe)0.1(SnSe)0.9 films have been studied. The data from the scanning electron microscope showed that the grain sizes of the films were 5-6 μm and the films had a close-packed polycrystalline structure. The results of X-ray diffraction analysis of the samples revealed that the films have an orthorhombic structure. Structural parameters of the obtained films are given.
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