CdTe solar cells have shown high efficiency and the technology is scalable. As a result thin film CdTe modules are competitive with crystalline silicon modules. Thin film CdTe devices with efficiency above 22% have been reported using high substrate temperatures during the deposition process. It is known that high substrate temperatures result in large grain size with a reduced number of grain boundaries and this is believed to contribute to the high efficiency. However, use of high temperature requires robust substrates and excludes the use of most flexible substrate materials. It also involves higher energy consumption and more complicated machinery. In this work we present a process for high efficiency solar cells with an improved front contact, by introducing magnesium-doped zinc oxide high resistance transparent layer. By optimizing the fabrication process we have achieved a conversion efficiency exceeding 16%, which is one of the highest reported for substrate temperatures below 500°C.

High Efficiency CdTe Solar Cells by Low Temperature Deposition with MgZnO HRT Layer

D. Menossi;E. Artegiani;F. Piccinelli;A. Romeo
2017-01-01

Abstract

CdTe solar cells have shown high efficiency and the technology is scalable. As a result thin film CdTe modules are competitive with crystalline silicon modules. Thin film CdTe devices with efficiency above 22% have been reported using high substrate temperatures during the deposition process. It is known that high substrate temperatures result in large grain size with a reduced number of grain boundaries and this is believed to contribute to the high efficiency. However, use of high temperature requires robust substrates and excludes the use of most flexible substrate materials. It also involves higher energy consumption and more complicated machinery. In this work we present a process for high efficiency solar cells with an improved front contact, by introducing magnesium-doped zinc oxide high resistance transparent layer. By optimizing the fabrication process we have achieved a conversion efficiency exceeding 16%, which is one of the highest reported for substrate temperatures below 500°C.
2017
3-936338-47-7
Buffer Layer
CdTe
Transparent conductive oxide
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/975922
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