Tin sulfide is one of the most promising alternative materials for photovoltaic. One main requirement for enhancing device efficiency is high quality SnS thin films. We present our study of recrystallization of SnS thin film by post deposition treatment at high temperature with KI and SnCl2. A recrystallization of SnS was achieved with both KI and SnCl2, but it has been observed that this phenomenon occurs only when SnS film is deposited at high temperature, whereas for low temperature-SnS film the treatment process produces a mix of secondary phases into the SnS matrix.

A study of SnS recrystallization by post deposition treatment

DI MARE, Simone;SALAVEI, Andrei;Menossi, Daniele;PICCINELLI, FABIO;BERNARDI, Paolo;ARTEGIANI, ELISA;Kumar, Arun;MARIOTTO, Gino;ROMEO, Alessandro
2016-01-01

Abstract

Tin sulfide is one of the most promising alternative materials for photovoltaic. One main requirement for enhancing device efficiency is high quality SnS thin films. We present our study of recrystallization of SnS thin film by post deposition treatment at high temperature with KI and SnCl2. A recrystallization of SnS was achieved with both KI and SnCl2, but it has been observed that this phenomenon occurs only when SnS film is deposited at high temperature, whereas for low temperature-SnS film the treatment process produces a mix of secondary phases into the SnS matrix.
978-1-5090-2724-8
annealing; SnS; Thin films
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/958469
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