Tin sulfide is one of the most promising alternative materials for photovoltaic. One main requirement for enhancing device efficiency is high quality SnS thin films. We present our study of recrystallization of SnS thin film by post deposition treatment at high temperature with KI and SnCl2. A recrystallization of SnS was achieved with both KI and SnCl2, but it has been observed that this phenomenon occurs only when SnS film is deposited at high temperature, whereas for low temperature-SnS film the treatment process produces a mix of secondary phases into the SnS matrix.
A study of SnS recrystallization by post deposition treatment
DI MARE, Simone;SALAVEI, Andrei;Menossi, Daniele;PICCINELLI, FABIO;BERNARDI, Paolo;ARTEGIANI, ELISA;Kumar, Arun;MARIOTTO, Gino;ROMEO, Alessandro
2016-01-01
Abstract
Tin sulfide is one of the most promising alternative materials for photovoltaic. One main requirement for enhancing device efficiency is high quality SnS thin films. We present our study of recrystallization of SnS thin film by post deposition treatment at high temperature with KI and SnCl2. A recrystallization of SnS was achieved with both KI and SnCl2, but it has been observed that this phenomenon occurs only when SnS film is deposited at high temperature, whereas for low temperature-SnS film the treatment process produces a mix of secondary phases into the SnS matrix.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
conf rec II 07749627.pdf
solo utenti autorizzati
Licenza:
Accesso ristretto
Dimensione
668.27 kB
Formato
Adobe PDF
|
668.27 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.