In recent times, new earth abundant and non toxic materials, like Cu2ZnSnS4 or SnS, have acquired a considerable interest in the photovoltaic research field. In this work, SnS thin films solar cells were prepared in superstrate configuration by vacuum evaporation of 99.99 % pure SnS compound on a glass/ITO/ZnO/CdS stack substrate heated at several temperatures. The morphology, structure and stoichiometry of as deposited SnS absorber layers were studied. Several post deposition treatments were performed in order to improve the SnS thin film crystallinity. The SnS treated layers were also characterized. The J-V characteristics of both as deposited and treated SnS thin film solar cells were determined after the gold back contact deposition. We report a best working device with a power conversion efficiency of 1.51 %

Analysis of SnS Growth and Post Deposition Treatment by Congruent Physical Vapor Deposition

DI MARE, Simone;SALAVEI, Andrei;PICCINELLI, FABIO;ROMEO, Alessandro
2015-01-01

Abstract

In recent times, new earth abundant and non toxic materials, like Cu2ZnSnS4 or SnS, have acquired a considerable interest in the photovoltaic research field. In this work, SnS thin films solar cells were prepared in superstrate configuration by vacuum evaporation of 99.99 % pure SnS compound on a glass/ITO/ZnO/CdS stack substrate heated at several temperatures. The morphology, structure and stoichiometry of as deposited SnS absorber layers were studied. Several post deposition treatments were performed in order to improve the SnS thin film crystallinity. The SnS treated layers were also characterized. The J-V characteristics of both as deposited and treated SnS thin film solar cells were determined after the gold back contact deposition. We report a best working device with a power conversion efficiency of 1.51 %
2015
3-936338-39-6
Thin Film, SnS, Annealing, Recrystallization
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/932163
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