The CIGS layers were grown with a vacuum evaporation method. The CdS was deposited by a high vacuum evaporation (HVE) method at different substrate temperatures and post deposition treatments were applied. Properties of different CdS layers are characterized and the analyses of the current-voltage and spectral response measurements have been performed to identify the differences of CBD and PVD processes. ZnS and ZnSe buffer layers were applied as an alternative to CdS. Layers of different thickness were grown by e-beam (EB) and thermal evaporation (VE) at different substrate temperatures (RT to 400 °C). A post-deposition annealing was applied in order to control the diffusion of Zn into the CIGS. Upon light soaking, increase in Voc and FF are measured.
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