Our group fabricates and studies CdTe based solar cells deposited by thermal evaporation method at low substrate temperature (below 450 °C). In this paper we present and study CdSeTe/CdTe cells, where the CdSeTe compound is formed by evaporating in sequence a CdSe and a CdTe layer, subsequently mixed by a CdCl2 activation treatment. These devices, with an absorber thickness of only 2 μm, show current densities above 27 mA/cm2. Earlier we also introduced an innovative method to develop CdSeTe by treating a thin CdTe layer at high temperature in selenium atmosphere (selenization), which gets subsequently mixed with a thicker CdTe layer. We study the structure of the new devices completely manufactured by evaporation and we compare them with the samples fabricated by selenization. This reveals how the manufacturing method of the CdSeTe layer affects the device properties.
STUDY OF CDSETE/CDTE DEVICES FABRICATED BY THERMAL EVAPORATION
	
	
	
		
		
		
		
		
	
	
	
	
	
	
	
	
		
		
		
		
		
			
			
			
		
		
		
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
		
		
		
	
Elisa Artegiani;Prabeesh Punathil;Solidea Zanetti;Narges Torabi;Alessandro Romeo
			2022-01-01
Abstract
Our group fabricates and studies CdTe based solar cells deposited by thermal evaporation method at low substrate temperature (below 450 °C). In this paper we present and study CdSeTe/CdTe cells, where the CdSeTe compound is formed by evaporating in sequence a CdSe and a CdTe layer, subsequently mixed by a CdCl2 activation treatment. These devices, with an absorber thickness of only 2 μm, show current densities above 27 mA/cm2. Earlier we also introduced an innovative method to develop CdSeTe by treating a thin CdTe layer at high temperature in selenium atmosphere (selenization), which gets subsequently mixed with a thicker CdTe layer. We study the structure of the new devices completely manufactured by evaporation and we compare them with the samples fabricated by selenization. This reveals how the manufacturing method of the CdSeTe layer affects the device properties.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.



