In our laboratory, Cu2ZnSn(S,Se)4 (CZTSSe) films are prepared by selenization of spin coated CZTS precursors. In this study, different temperatures are tested for the selenization process and their effects on the device are investigated. The influence of the selenization temperature on the Se incorporation and structural properties of the absorber have been analyzed by X-ray diffraction, Raman spectroscopy and scanning electron microscopy methods. Current-voltage analysis reveals a fill factor reduction with increasing temperature, concurrently with an improvement in short circuit current and efficiency. SLG/Mo/CZTSSe/CdS/iZnO/ITO/Au cells fabricated with selenization process at 550 °C reach an efficiency of 6.3 %.
ANALYSIS OF SELENIZATION TEMPERATURE FOR THE PERFORMANCE IMPROVEMENT OF SPIN COATED CZTSSe SOLAR CELLS
	
	
	
		
		
		
		
		
	
	
	
	
	
	
	
	
		
		
		
		
		
			
			
			
		
		
		
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
		
		
		
	
Prabeesh Punathil;Solidea Zanetti;Elisa Artegiani;Narges Torabi;Alessandro Romeo
			2022-01-01
Abstract
In our laboratory, Cu2ZnSn(S,Se)4 (CZTSSe) films are prepared by selenization of spin coated CZTS precursors. In this study, different temperatures are tested for the selenization process and their effects on the device are investigated. The influence of the selenization temperature on the Se incorporation and structural properties of the absorber have been analyzed by X-ray diffraction, Raman spectroscopy and scanning electron microscopy methods. Current-voltage analysis reveals a fill factor reduction with increasing temperature, concurrently with an improvement in short circuit current and efficiency. SLG/Mo/CZTSSe/CdS/iZnO/ITO/Au cells fabricated with selenization process at 550 °C reach an efficiency of 6.3 %.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.



