Annealing Temperature and Post Sulphurizaton/Seleniation Effects on Solution-Based CZTS Devices

CZTS absorber films were prepared by spin-coating technique and the effect of selenization temperature on the structural and morphological properties of the CZTSSe films were studied. After confirming the phase purity of the selenized CZTS films, precursor films were also annealed in different atmosphere including sulphur and selenium+sulphur with the optimized annealing temperature. The structural properties of the films were analyzed by X-ray diffraction and Raman spectroscopy; the surface morphology of the films was analyzed by atomic force microscopy. The phase purity was confirmed for the CZTS films annealed at 450°C in different atmosphere. A prototype CZTS solar cell was fabricated with spin-coated CZTS precursor film selenized at 450°C. The influence of light soaking on the films was also studied and observed an increase in device performance after 24hr light soaking. The highest device efficiency of 2.18% with Voc=212 mV, Jsc=35.1 mA/cm2, and FF=33.4% was observed for CZTS films selenized at 450°C.