B-implanted Ge samples have been investigated by micro-Raman spectroscopy under different excitation wavelengths, with the aim of gaining insights about the B distribution at different depths beneath the sample surface. The intensities, observed under the different excitation wavelengths, of the B-Ge Raman peak at about 545 cm-1, which is due to the local vibrational mode of the substitutional B atoms in the Ge matrix, have been used to calibrate the optical absorption lengths in B-implanted Ge. Then, by using these calibrated values, a very sharp correlation between the spectral features of the Ge-Ge Raman peak at 300 cm-1 and the content of substitutional B atoms has been derived. Accordingly, a non-destructive approach, based on micro-Raman spectroscopy under different excitation wavelengths, is presented to estimate, at least at the lowest depths, the carrier concentration profiles from the spectral features of the Ge-Ge Raman peak.
A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge
GIAROLA, Marco;MARIOTTO, Gino
2014-01-01
Abstract
B-implanted Ge samples have been investigated by micro-Raman spectroscopy under different excitation wavelengths, with the aim of gaining insights about the B distribution at different depths beneath the sample surface. The intensities, observed under the different excitation wavelengths, of the B-Ge Raman peak at about 545 cm-1, which is due to the local vibrational mode of the substitutional B atoms in the Ge matrix, have been used to calibrate the optical absorption lengths in B-implanted Ge. Then, by using these calibrated values, a very sharp correlation between the spectral features of the Ge-Ge Raman peak at 300 cm-1 and the content of substitutional B atoms has been derived. Accordingly, a non-destructive approach, based on micro-Raman spectroscopy under different excitation wavelengths, is presented to estimate, at least at the lowest depths, the carrier concentration profiles from the spectral features of the Ge-Ge Raman peak.File | Dimensione | Formato | |
---|---|---|---|
JRS 45 (2014) 197-201.pdf
accesso aperto
Tipologia:
Documento in Post-print
Licenza:
Dominio pubblico
Dimensione
638.14 kB
Formato
Adobe PDF
|
638.14 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.