16.2% efficient Cu(In,Ga)Se2/CdS solar cells were prepared with a process which uses only sputtering and selenization. InSe, GaSe and Cu sputtering targets were used for the preparation of precursors. Selenization was done in a vacuum chamber in which pure Se is evaporated from a graphite crucible. CdS was deposited by sputtering in an atmosphere of Ar containing 3% of CHF3. The process is highly reproducible and it is easily scalable to much larger area substrates.

High efficiency Cu(In,Ga)Se2/CdS thin film solar cells obtained with precursors sputtered from InSe, GaSe and Cu targets

ROMEO, Alessandro
2013

Abstract

16.2% efficient Cu(In,Ga)Se2/CdS solar cells were prepared with a process which uses only sputtering and selenization. InSe, GaSe and Cu sputtering targets were used for the preparation of precursors. Selenization was done in a vacuum chamber in which pure Se is evaporated from a graphite crucible. CdS was deposited by sputtering in an atmosphere of Ar containing 3% of CHF3. The process is highly reproducible and it is easily scalable to much larger area substrates.
Thin Film Solar Cell; CIGS; sputtering
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11562/563952
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