Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy

Andrea, Sanson; Enrico, Napolitani; Giarola, Marco; Giuliana, Impellizzeri; Vittorio, Privitera; Mariotto, Gino; Alberto, Carnera

doi:10.7567/APEX.6.042404

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Al-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at 370 cm1 related to substitutional Al atoms. Furthermore, a clear relationship between the Ge–Ge Raman peak at 300 cm1 and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors.

Titolo:	Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy
Autori:	Andrea Sanson Enrico Napolitani GIAROLA, Marco Giuliana Impellizzeri Vittorio Privitera MARIOTTO, Gino Alberto Carnera mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2013
Rivista:	APPLIED PHYSICS EXPRESS
Abstract:	Al-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at 370 cm1 related to substitutional Al atoms. Furthermore, a clear relationship between the Ge–Ge Raman peak at 300 cm1 and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors.
Handle:	http://hdl.handle.net/11562/562349
Appare nelle tipologie:	01.01 Articolo in Rivista

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