Al-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at 370 cm1 related to substitutional Al atoms. Furthermore, a clear relationship between the Ge–Ge Raman peak at 300 cm1 and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors.

Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy

GIAROLA, Marco;MARIOTTO, Gino;
2013

Abstract

Al-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at 370 cm1 related to substitutional Al atoms. Furthermore, a clear relationship between the Ge–Ge Raman peak at 300 cm1 and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors.
Germanium crystal; ion-implantation; carrier concentration profiles; depth-resolved micro-Raman spectroscopy
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11562/562349
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