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EnglishAl-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at 370 cm1 related to substitutional Al atoms. Furthermore, a clear relationship between the Ge–Ge Raman peak at 300 cm1 and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors.
| Titolo: | Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy | |
| Autori: | ||
| Data di pubblicazione: | 2013 | |
| Rivista: | ||
| Abstract: | Al-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at 370 cm1 related to substitutional Al atoms. Furthermore, a clear relationship between the Ge–Ge Raman peak at 300 cm1 and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors. | |
| Handle: | http://hdl.handle.net/11562/562349 | |
| Appare nelle tipologie: | 01.01 Articolo in Rivista |
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| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| APEX 6 (2013) 042404 1-4.pdf | Documento in Post-print |  | Open Access Visualizza/Apri |
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