n this paper we describe a low substrate temperature CdTe fabrication process by vacuum evaporation (VE) where the recrystallization step avoids the use of CdCl2, which is a carcinogenic material. In our process CdS and CdTe are deposited at pressures of 10−6 mbar in the same chamber by thermal evaporation and with substrate temperature of 150 °C and 340 °C, respectively. The CdTe/CdS/TCO stacks are then put in a quartz chamber and, after having previously pumped the chamber down to 10−5 mbar, a controlled mixture of argon and chlorine containing gas is fluxed with a substrate temperature in a range between 400 °C and 450 °C. The morphological properties of the single layers are studied by X-ray diffraction (XRD), atomic force microscopy (AFM), cathodo-luminescence (CL) and the electrical properties of the finished devices are presented by means of current–voltage (I–V) and capacitance–voltage (C–V) measurements.

Study of difluorochloromethane activation treatment on low substrate temperature deposited CdTe solar cells

SALAVEI, Andrei;RIMMAUDO, Ivan;PICCINELLI, FABIO;ROMEO, Alessandro
2013

Abstract

n this paper we describe a low substrate temperature CdTe fabrication process by vacuum evaporation (VE) where the recrystallization step avoids the use of CdCl2, which is a carcinogenic material. In our process CdS and CdTe are deposited at pressures of 10−6 mbar in the same chamber by thermal evaporation and with substrate temperature of 150 °C and 340 °C, respectively. The CdTe/CdS/TCO stacks are then put in a quartz chamber and, after having previously pumped the chamber down to 10−5 mbar, a controlled mixture of argon and chlorine containing gas is fluxed with a substrate temperature in a range between 400 °C and 450 °C. The morphological properties of the single layers are studied by X-ray diffraction (XRD), atomic force microscopy (AFM), cathodo-luminescence (CL) and the electrical properties of the finished devices are presented by means of current–voltage (I–V) and capacitance–voltage (C–V) measurements.
Thin Film; CdTe polycrystalline thin film; crystal growth; X ray crystal structures; Photovoltaics
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11562/550549
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