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EnglishThis work reports the peculiar properties of a graphene film prepared by the chemical vapor deposition of ethylene in high vacuum on a well oriented and carefully cleaned Pt(111) crystal surface maintained at high temperature. In-situ and ex-situ characterization techniques (low-energy electron diffraction, high-resolution electron energy loss spectroscopy, scanning electron microscopy and Raman micro-spectroscopy) used here indicate the prevalence of single-layer regions and the presence of two different orientations of the graphene sheets with respect to the Pt(111) substrate. In most of the deposited area, evidence is found of a compressive stress for the graphene lattice, as a net result of the growth process on a metal substrate. This graphene film grown on Pt(111) exhibits a lower degree of order and of homogeneity with respect to the exfoliated graphene on Si/SiO2, as it is found generally for graphene on metals, but several characterization techniques indicate a better quality than in previous deposition experiments on the same metal substrate.
| Titolo: | Spectroscopic characterization of graphene films grown on Pt(111) surface by chemical vapor deposition of ethylene | |
| Autori: | ||
| Data di pubblicazione: | 2013 | |
| Rivista: | ||
| Abstract: | This work reports the peculiar properties of a graphene film prepared by the chemical vapor deposition of ethylene in high vacuum on a well oriented and carefully cleaned Pt(111) crystal surface maintained at high temperature. In-situ and ex-situ characterization techniques (low-energy electron diffraction, high-resolution electron energy loss spectroscopy, scanning electron microscopy and Raman micro-spectroscopy) used here indicate the prevalence of single-layer regions and the presence of two different orientations of the graphene sheets with respect to the Pt(111) substrate. In most of the deposited area, evidence is found of a compressive stress for the graphene lattice, as a net result of the growth process on a metal substrate. This graphene film grown on Pt(111) exhibits a lower degree of order and of homogeneity with respect to the exfoliated graphene on Si/SiO2, as it is found generally for graphene on metals, but several characterization techniques indicate a better quality than in previous deposition experiments on the same metal substrate. | |
| Handle: | http://hdl.handle.net/11562/543549 | |
| Appare nelle tipologie: | 01.01 Articolo in Rivista |
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| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| JRS 44 (10) (2013) 1393-1397.pdf | Documento in Post-print |  | Open Access Visualizza/Apri |
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