This work reports the peculiar properties of a graphene film prepared by the chemical vapor deposition of ethylene in high vacuum on a well oriented and carefully cleaned Pt(111) crystal surface maintained at high temperature. In-situ and ex-situ characterization techniques (low-energy electron diffraction, high-resolution electron energy loss spectroscopy, scanning electron microscopy and Raman micro-spectroscopy) used here indicate the prevalence of single-layer regions and the presence of two different orientations of the graphene sheets with respect to the Pt(111) substrate. In most of the deposited area, evidence is found of a compressive stress for the graphene lattice, as a net result of the growth process on a metal substrate. This graphene film grown on Pt(111) exhibits a lower degree of order and of homogeneity with respect to the exfoliated graphene on Si/SiO2, as it is found generally for graphene on metals, but several characterization techniques indicate a better quality than in previous deposition experiments on the same metal substrate.