Photoluminescence properties of silicon nanocrystals embedded in five different oxide matrices are analyzed. Samples are silicon rich oxide and oxynitride produced by PECVD and ion implantation and crystalline and amorphous aluminum oxide implanted with silicon.

Dielectric matrix influence on the photoluminescence properties of silicon nanocrystals

Daldosso, Nicola;
2006

Abstract

Photoluminescence properties of silicon nanocrystals embedded in five different oxide matrices are analyzed. Samples are silicon rich oxide and oxynitride produced by PECVD and ion implantation and crystalline and amorphous aluminum oxide implanted with silicon.
Nanocrystals; photoluminescence; structural properties; matrix
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11562/477095
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