We have performed photoluminescence analysis of silicon rich oxide (SRO) and silicon rich oxynitride (SRON) samples deposited by plasma enhanced chemical vapor deposition (PECVD) and thermally annealed to cause the formation of silicon nanocrystals (Si-nc). Our purpose was to investigate the influence of nitrogen embedded into the oxide matrix on the photoluminescence properties of Si-nc. We found a large incorporation of silicon and a decrease of its diffusivity when the oxide is nitrogen rich. As a consequence the rate of crystallization for Si aggregates is slowed down when nitrogen is present in the oxide matrix.
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