Amorphous carbon-nitrogen films deposited by RF-magnetron sputtering onto Si substrates were annealed in vacuum in the temperature range of 300-800 "C during 30 min, with no sequential treatment. The films were analyzed by Raman spectroscopy, used as a probe of microstructural modifications induced by thermal treatment. The main features observed in the Raman spectra are two broad bands at ~1360cm-l (D-band) and -1575cm- 1 (G-band), characteristic of amorphous carbon materials. The ratio between their intensities (IDIIG) is found to increases with the annealing temperature. Additionally, the spectra present other two weak bands, one at -700 cm -1 (I700) and another at 2230 em -1 (I2230)' Normalized against the G-band, their intensities present opposite temperature dependence: 1700 decreases by a factor of three, while 12230 increases by the same factor in the temperature range studied here. A strong reduction of the luminescence background with the annealing temperature is observed. These results indicate a substantial reduction of the dangling bonds accompanied by an increase of the number of C==N bonds and of the size, or the number, of the graphitic domains. ©

Raman spectroscopy of annealed carbon nitride films deposited by RF-magnetron sputtering

MARIOTTO, Gino
1998

Abstract

Amorphous carbon-nitrogen films deposited by RF-magnetron sputtering onto Si substrates were annealed in vacuum in the temperature range of 300-800 "C during 30 min, with no sequential treatment. The films were analyzed by Raman spectroscopy, used as a probe of microstructural modifications induced by thermal treatment. The main features observed in the Raman spectra are two broad bands at ~1360cm-l (D-band) and -1575cm- 1 (G-band), characteristic of amorphous carbon materials. The ratio between their intensities (IDIIG) is found to increases with the annealing temperature. Additionally, the spectra present other two weak bands, one at -700 cm -1 (I700) and another at 2230 em -1 (I2230)' Normalized against the G-band, their intensities present opposite temperature dependence: 1700 decreases by a factor of three, while 12230 increases by the same factor in the temperature range studied here. A strong reduction of the luminescence background with the annealing temperature is observed. These results indicate a substantial reduction of the dangling bonds accompanied by an increase of the number of C==N bonds and of the size, or the number, of the graphitic domains. ©
Carbon nitride films, rf-magnetron sputtering, Raman spectroscopy.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11562/435002
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