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EnglishCu/a-Si:H interfacial reaction and copper silicide mediated crystallization of amorphous silicon have been investigated by a combination of several analytical techniques: atomic force microscopy, scanning electron microscopy, Raman spectroscopy through a microscope probe, Auger electron spectroscopy and nuclear analysis. Si crystallization has been evidenced in samples annealed at 280 degrees C, while the formation of copper silicide occurs at 200 degrees C. The role of hydrogen in the crystallization process is discussed.
| Titolo: | LOW-TEMPERATURE SILICON CRYSTALLIZATION MEDIATED BY COPPER SILICIDE FORMATION IN CU/A-SI-H BILAYERS | |
| Autori: | ||
| Data di pubblicazione: | 1994 | |
| Rivista: | ||
| Abstract: | Cu/a-Si:H interfacial reaction and copper silicide mediated crystallization of amorphous silicon have been investigated by a combination of several analytical techniques: atomic force microscopy, scanning electron microscopy, Raman spectroscopy through a microscope probe, Auger electron spectroscopy and nuclear analysis. Si crystallization has been evidenced in samples annealed at 280 degrees C, while the formation of copper silicide occurs at 200 degrees C. The role of hydrogen in the crystallization process is discussed. | |
| Handle: | http://hdl.handle.net/11562/434838 | |
| Appare nelle tipologie: | 01.01 Articolo in Rivista |
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