Hydrogen out-diffusion in amorphous hydrogenated films, a-Ge:D, a-C:H and a-C:H(N) films, was studied by using elastic recoil detection analysis (ERDA). The a-Ge:D films were deposited onto Si substrates at 210-degrees-C by rf-sputtering in an atmosphere of argon and deuterium. The a-C:H and a-C:H(N) films produced by plasma decomposition of a methane-nitrogen mixture, were deposited onto Si substrates at room-temperature. The a-Ge:D samples were annealed in nitrogen atmosphere at temperatures between 200 and 400-degrees-C and the carbon films in a vacuum furnace, with the temperature ranging from 300 to 700-degrees-C. The total hydrogen (deuterium) content and the concentration depth-profiles were determined by ERDA using helium beams of 2.2 and 3.0 MeV for hydrogen and deuterium profiles, respectively. Two kinds of hydrogen motion coexist in a-Ge:D films: a fast one, probably due to the presence of a network of interconnected voids, and a slower one, due to the dispersive-like diffusion of atomic deuterium in the amorphous skeleton. In a-C:H and a-C:H(N) films only the fast process was observed. A correlation between hydrogen loss and structural modifications of annealed carbon films was also made.

STUDY OF ANNEALED AMORPHOUS HYDROGENATED FILMS BY ELASTIC RECOIL DETECTION ANALYSIS

MARIOTTO, Gino
1994

Abstract

Hydrogen out-diffusion in amorphous hydrogenated films, a-Ge:D, a-C:H and a-C:H(N) films, was studied by using elastic recoil detection analysis (ERDA). The a-Ge:D films were deposited onto Si substrates at 210-degrees-C by rf-sputtering in an atmosphere of argon and deuterium. The a-C:H and a-C:H(N) films produced by plasma decomposition of a methane-nitrogen mixture, were deposited onto Si substrates at room-temperature. The a-Ge:D samples were annealed in nitrogen atmosphere at temperatures between 200 and 400-degrees-C and the carbon films in a vacuum furnace, with the temperature ranging from 300 to 700-degrees-C. The total hydrogen (deuterium) content and the concentration depth-profiles were determined by ERDA using helium beams of 2.2 and 3.0 MeV for hydrogen and deuterium profiles, respectively. Two kinds of hydrogen motion coexist in a-Ge:D films: a fast one, probably due to the presence of a network of interconnected voids, and a slower one, due to the dispersive-like diffusion of atomic deuterium in the amorphous skeleton. In a-C:H and a-C:H(N) films only the fast process was observed. A correlation between hydrogen loss and structural modifications of annealed carbon films was also made.
Amorphous hydrogenated films; Elastic recoil detection analysis (ERDA), Hydrogen out-diffusion.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11562/434832
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