A process for the preparation of CuInGaSe2 thin film useable as an absorber layer in CuInGaSe2/CdS film deposited on as a substrate covered by a Mo film, and subsequent selenization. Before selenization, In2Se3 and Cu are mixed in a vacuum chamber in the absence of Se. The process uses a polycristalline target for the deposition of In2Se3. This process is suitable for the production -at industrial level- of CdS thin film solar cells in which the absorber layer is constituted by Cu(In,Ga)Se2.
Process for the production of Cu(In,Ga)Se2/CdS thin film solar cells
ROMEO, Alessandro;
2011
Abstract
A process for the preparation of CuInGaSe2 thin film useable as an absorber layer in CuInGaSe2/CdS film deposited on as a substrate covered by a Mo film, and subsequent selenization. Before selenization, In2Se3 and Cu are mixed in a vacuum chamber in the absence of Se. The process uses a polycristalline target for the deposition of In2Se3. This process is suitable for the production -at industrial level- of CdS thin film solar cells in which the absorber layer is constituted by Cu(In,Ga)Se2.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
