We studied the effect of rapid thermal processing and furnace annealing on the transport properties and electroluminescence (EL) of SiO(2) layers doped with Si and Er ions. The results show that for the same annealing temperature, furnace annealing decreases the electrical conductivity and increases the probability of impact excitation, which leads to an improved external quantum efficiency. Correlations between predictions from phenomenological transport models, annealing regimes and erbium EL are observed and discussed.

Effect of the annealing treatments on the electroluminescence efficiency of SiO(2) layers doped with Si and Er

Daldosso, Nicola;
2012

Abstract

We studied the effect of rapid thermal processing and furnace annealing on the transport properties and electroluminescence (EL) of SiO(2) layers doped with Si and Er ions. The results show that for the same annealing temperature, furnace annealing decreases the electrical conductivity and increases the probability of impact excitation, which leads to an improved external quantum efficiency. Correlations between predictions from phenomenological transport models, annealing regimes and erbium EL are observed and discussed.
Silicon nanocrystals; Photoluminescence
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/389897
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