Thin (50 nm) erbium implanted silicon rich oxide films suitable for slot waveguides applications have been produced and studied by means of optical spectroscopy and structural characterisation techniques. Comparison between different deposition techniques in terms of light emitting properties of erbium ions is presented. Special attention is given to the efficiency improvement of the energy transfer from silicon nanoclusters to erbium ions where the type of annealing treatment is proven to be of crucial importance.

Erbium implanted silicon rich oxide thin films suitable for slot waveguides applications

Daldosso, Nicola;
2011

Abstract

Thin (50 nm) erbium implanted silicon rich oxide films suitable for slot waveguides applications have been produced and studied by means of optical spectroscopy and structural characterisation techniques. Comparison between different deposition techniques in terms of light emitting properties of erbium ions is presented. Special attention is given to the efficiency improvement of the energy transfer from silicon nanoclusters to erbium ions where the type of annealing treatment is proven to be of crucial importance.
SI NANOCRYSTALS; erbium; thin film; Waveguides
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/389894
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact