We report on the energy-transfer mechanism between amorphous Si nanoclusters and erbium ions in a SiO(2) matrix. We have studied a set of optimized samples which show maximum Er(3+) to Si-nc coupling ratio. We demonstrate that the transfer mainly occurs to the (4)I(11/2) level in less than 100 ns and that higher Er(3+) energetic levels are not involved. Furthermore, we show that there are no traces of Auger back-transfer, excited state absorption, or pair-induced quenching mechanisms in our samples, leading us to propose a model in which the short interaction distance between Si-nc and Er(3+) ions is the limiting factor for the noncomplete excitation of the whole Er(3+) active population.

Energy transfer between amorphous Si nanoclusters and Er(3+) ions in a SiO(2) matrix

Daldosso, Nicola;
2009

Abstract

We report on the energy-transfer mechanism between amorphous Si nanoclusters and erbium ions in a SiO(2) matrix. We have studied a set of optimized samples which show maximum Er(3+) to Si-nc coupling ratio. We demonstrate that the transfer mainly occurs to the (4)I(11/2) level in less than 100 ns and that higher Er(3+) energetic levels are not involved. Furthermore, we show that there are no traces of Auger back-transfer, excited state absorption, or pair-induced quenching mechanisms in our samples, leading us to propose a model in which the short interaction distance between Si-nc and Er(3+) ions is the limiting factor for the noncomplete excitation of the whole Er(3+) active population.
amorphous state; atomic clusters; elemental semiconductor; erbium; excited states; Silicon nanoclusters
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/389884
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