We report on the study and modeling of the structural and optical properties of rib-loaded waveguides working in the 600-900-nm spectral range. A Si nanocrystal (Si-nc) rich SiO2 layer with nominal Si excess ranging from 10% to 20% was produced by quadrupole ion implantation of Si into thermal SiO2 formed on a silicon substrate. Si-ncs were precipitated by annealing at 1100 degrees C, forming a 0.4-mu m-thick core layer in the waveguide. The Si content, the Si-nc density and size, the Si-nc emission, and the active layer effective refractive index were determined by dedicated experiments using x-ray photoelectron spectroscopy, Raman spectroscopy, energy-filtered transmission electron microscopy, photoluminescence and m-lines spectroscopy. Rib-loaded waveguides were fabricated by photolithographic and reactive ion etching processes, with patterned rib widths ranging from 1 to 8 mu m. Light propagation in the waveguide was observed and losses of 11 dB/cm at 633 and 780 nm were measured, modeled and interpreted. (C) 2005 American Institute of Physics.

Low-loss rib waveguides containing Si nanocrystals embedded in SiO2

Daldosso, Nicola;
2005

Abstract

We report on the study and modeling of the structural and optical properties of rib-loaded waveguides working in the 600-900-nm spectral range. A Si nanocrystal (Si-nc) rich SiO2 layer with nominal Si excess ranging from 10% to 20% was produced by quadrupole ion implantation of Si into thermal SiO2 formed on a silicon substrate. Si-ncs were precipitated by annealing at 1100 degrees C, forming a 0.4-mu m-thick core layer in the waveguide. The Si content, the Si-nc density and size, the Si-nc emission, and the active layer effective refractive index were determined by dedicated experiments using x-ray photoelectron spectroscopy, Raman spectroscopy, energy-filtered transmission electron microscopy, photoluminescence and m-lines spectroscopy. Rib-loaded waveguides were fabricated by photolithographic and reactive ion etching processes, with patterned rib widths ranging from 1 to 8 mu m. Light propagation in the waveguide was observed and losses of 11 dB/cm at 633 and 780 nm were measured, modeled and interpreted. (C) 2005 American Institute of Physics.
Silicon nanocrystals; OPTICAL GAIN; STIMULATED-EMISSION; Waveguides
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/389864
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