X-ray absorption measurements in total electron yield mode have been carried out on Si nanodots embedded in amorphous silica produced by plasma enhanced chemical vapor deposition (PECVD). The amount of Si atoms composing the Si nanodots and the chemical composition of the amorphous host matrix has been determined thanks to the comparison with Rutherford backscattering spectrometry data. The influence of nitrogen, incorporated during the PECVD procedure, on the structure of the host silica matrix has been discussed.
Chemical composition and local structure of plasma enhanced chemical vapor-deposited Si nanodots and their embedding silica matrix
Daldosso, Nicola;
2003-01-01
Abstract
X-ray absorption measurements in total electron yield mode have been carried out on Si nanodots embedded in amorphous silica produced by plasma enhanced chemical vapor deposition (PECVD). The amount of Si atoms composing the Si nanodots and the chemical composition of the amorphous host matrix has been determined thanks to the comparison with Rutherford backscattering spectrometry data. The influence of nitrogen, incorporated during the PECVD procedure, on the structure of the host silica matrix has been discussed.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
