X-ray absorption fine structure (XAFS) at the Si K edge in porous silicon has been measured by monitoring the photoluminescence yield (PLY) in different parts of the luminescence band: at increasing luminescence energy, a continuous positive shift of the x-ray absorption edge has been observed. The peculiar selectivity of the partial PLY-XAFS technique to the luminescent sites allows us to perform a size selection of the different nanostructures distributed in a single porous-silicon sample. The recombination of carriers localized in quantum confined nanocrystals is confirmed to be the main cause of the optical emission.

Evidence of x-ray absorption-edge shift as a function of luminescence wavelength in porous silicon

Daldosso, Nicola;
2000

Abstract

X-ray absorption fine structure (XAFS) at the Si K edge in porous silicon has been measured by monitoring the photoluminescence yield (PLY) in different parts of the luminescence band: at increasing luminescence energy, a continuous positive shift of the x-ray absorption edge has been observed. The peculiar selectivity of the partial PLY-XAFS technique to the luminescent sites allows us to perform a size selection of the different nanostructures distributed in a single porous-silicon sample. The recombination of carriers localized in quantum confined nanocrystals is confirmed to be the main cause of the optical emission.
VISIBLE-LIGHT EMISSION; POROUS SILICON; SI NANOCRYSTALS; quantum dots; Photoluminescence
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11562/389846
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