We study defect states in undoped and Eu3+-doped Lu3GaxAl5-xO12 (x = 0-5) garnet crystals by wavelength resolved thermally stimulated luminescence above room temperature. Eu3+ ions act not only as recombination centres but also as high temperature traps, as testified by the presence of a TSL peak at 450 degrees C correlated with Eu3+-doping. With increasing gallium content all glow peaks are shifted to lower temperatures. This trend is confirmed also for powder samples prepared by sol-gel technique. The observed low temperature shift of the glow peaks can be considered as a consequence of the band gap reduction following the increase of Ga3+ concentration. The comparison with the glow curve of a Ce3+-doped crystal is also shown. (C) 2010 Elsevier B.V. All rights reserved.
Defect states in Lu3GaxAl5-xO12 crystals and powders
BETTINELLI, Marco Giovanni;SPEGHINI, Adolfo;
2010-01-01
Abstract
We study defect states in undoped and Eu3+-doped Lu3GaxAl5-xO12 (x = 0-5) garnet crystals by wavelength resolved thermally stimulated luminescence above room temperature. Eu3+ ions act not only as recombination centres but also as high temperature traps, as testified by the presence of a TSL peak at 450 degrees C correlated with Eu3+-doping. With increasing gallium content all glow peaks are shifted to lower temperatures. This trend is confirmed also for powder samples prepared by sol-gel technique. The observed low temperature shift of the glow peaks can be considered as a consequence of the band gap reduction following the increase of Ga3+ concentration. The comparison with the glow curve of a Ce3+-doped crystal is also shown. (C) 2010 Elsevier B.V. All rights reserved.
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