A process for large-scale production of CdTe/CdS thin film solar cells, films of the cells being deposited, in sequence, on a transparent substrate, the sequence comprising the steps of: depositing a film of a transparent conductive oxide (TCO) on the substrate; depositing a film of CdS on the TCO film, depositing a film of CdTe on the CdS film; treating the CdTe film with CdCl2; depositing a back-contact film on the treated CdTe film. Treatment of the CdTe film with CdCl2 comprises the steps of: forming a layer of CdCl2 on the CdTe film by evaporation, while mainting the substrate at room temperature; annealing the CdTel2 layer in a vacuum chamber at a temperature generally within a range of 300 mbar and 1000 mbar in an inert gas atmosphere; removing the inert gas from the chamber so as to produce a vacuum condition, while the substrate is kept at a temperature generally within a range of 350°C and 420°C whereby any residual CdCl2 is evaporated from the CdTe film surface.

Process for large-scale production of CdTe/CdS thin film solar cells

ROMEO, Alessandro
2002-01-01

Abstract

A process for large-scale production of CdTe/CdS thin film solar cells, films of the cells being deposited, in sequence, on a transparent substrate, the sequence comprising the steps of: depositing a film of a transparent conductive oxide (TCO) on the substrate; depositing a film of CdS on the TCO film, depositing a film of CdTe on the CdS film; treating the CdTe film with CdCl2; depositing a back-contact film on the treated CdTe film. Treatment of the CdTe film with CdCl2 comprises the steps of: forming a layer of CdCl2 on the CdTe film by evaporation, while mainting the substrate at room temperature; annealing the CdTel2 layer in a vacuum chamber at a temperature generally within a range of 300 mbar and 1000 mbar in an inert gas atmosphere; removing the inert gas from the chamber so as to produce a vacuum condition, while the substrate is kept at a temperature generally within a range of 350°C and 420°C whereby any residual CdCl2 is evaporated from the CdTe film surface.
2002
Process; CdTe; solar cell
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/309773
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