A thin film photo-voltaic device formed on a transparent substrate 41 comprises a p-type semiconductor layer 44, and an n-type semiconductor layer 43 forming a p-n junction at the interface with the p-type layer 44. Transparent conducting oxide (TCO) contacts 42 46 are provided on the p-type 44 and n-type 43 layers to form a device which converts radiation 40 47 incident on both front and back surfaces into electricity. The surface 45 of the p-type layer 44 contacting the TCO contact 46 is modified such that a buffer layer between the p-type layer 44 and the TCO contact 46 is not required. The photo-voltaic device can be stacked in tandem formation with other photo-voltaic devices to gather radiation at different wavelengths.
Bifacial Thin Films Solar Cells
ROMEO, Alessandro;
2003-01-01
Abstract
A thin film photo-voltaic device formed on a transparent substrate 41 comprises a p-type semiconductor layer 44, and an n-type semiconductor layer 43 forming a p-n junction at the interface with the p-type layer 44. Transparent conducting oxide (TCO) contacts 42 46 are provided on the p-type 44 and n-type 43 layers to form a device which converts radiation 40 47 incident on both front and back surfaces into electricity. The surface 45 of the p-type layer 44 contacting the TCO contact 46 is modified such that a buffer layer between the p-type layer 44 and the TCO contact 46 is not required. The photo-voltaic device can be stacked in tandem formation with other photo-voltaic devices to gather radiation at different wavelengths.
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