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EnglishThin film solar cells based on CdTe/CdS are expected to become the base material for the low-cost and efficient large-scale solar energy conversion devices. The samples have been investigate using current-voltage (I-V) and capacitance-voltage (C-V) measurements in order to define the transport mechanism in heterostructure and basic electronic parameters. Trap-assisted tunneling has been found to dominate carrier transport mechanism in the junction.
| Titolo: | Electrical Characterisation of CdTe/CdS Photovoltaic Devices |
| Autori: | |
| Data di pubblicazione: | 2000 |
| Rivista: | |
| Abstract: | Thin film solar cells based on CdTe/CdS are expected to become the base material for the low-cost and efficient large-scale solar energy conversion devices. The samples have been investigate using current-voltage (I-V) and capacitance-voltage (C-V) measurements in order to define the transport mechanism in heterostructure and basic electronic parameters. Trap-assisted tunneling has been found to dominate carrier transport mechanism in the junction. |
| Handle: | http://hdl.handle.net/11562/307269 |
| Appare nelle tipologie: | 01.01 Articolo in Rivista |
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