Thin film solar cells based on CdTe/CdS are expected to become the base material for the low-cost and efficient large-scale solar energy conversion devices. The samples have been investigate using current-voltage (I-V) and capacitance-voltage (C-V) measurements in order to define the transport mechanism in heterostructure and basic electronic parameters. Trap-assisted tunneling has been found to dominate carrier transport mechanism in the junction.
Electrical Characterisation of CdTe/CdS Photovoltaic Devices
ROMEO, Alessandro;
2000-01-01
Abstract
Thin film solar cells based on CdTe/CdS are expected to become the base material for the low-cost and efficient large-scale solar energy conversion devices. The samples have been investigate using current-voltage (I-V) and capacitance-voltage (C-V) measurements in order to define the transport mechanism in heterostructure and basic electronic parameters. Trap-assisted tunneling has been found to dominate carrier transport mechanism in the junction.
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