The interface states in TCO/CdS/CdTe and ZnO/CdS/Cu(In,Ga)Se2( photovoltaic devices have been studied by use of reverse-bias transient capacitance spectroscopy. Laplace transform analysis has been used in order to enhance a spectral resolution of the technique. It is shown that the method yields useful information on the electronic characteristics of the heterointerface in the thin film solar cells. The conclusions include a degree of inversion of the heterointerface and a contribution of tunneling in the carrier transport. The influence of these factors on photovoltaic performance of the devices under study is discussed.

Reverse-bias DLTS for investigation of the interface region in thin film solar cells

ROMEO, Alessandro;
2000-01-01

Abstract

The interface states in TCO/CdS/CdTe and ZnO/CdS/Cu(In,Ga)Se2( photovoltaic devices have been studied by use of reverse-bias transient capacitance spectroscopy. Laplace transform analysis has been used in order to enhance a spectral resolution of the technique. It is shown that the method yields useful information on the electronic characteristics of the heterointerface in the thin film solar cells. The conclusions include a degree of inversion of the heterointerface and a contribution of tunneling in the carrier transport. The influence of these factors on photovoltaic performance of the devices under study is discussed.
thin film; DLTS; CdTe; solar cells
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/307268
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