The interface states in TCO/CdS/CdTe and ZnO/CdS/Cu(In,Ga)Se2( photovoltaic devices have been studied by use of reverse-bias transient capacitance spectroscopy. Laplace transform analysis has been used in order to enhance a spectral resolution of the technique. It is shown that the method yields useful information on the electronic characteristics of the heterointerface in the thin film solar cells. The conclusions include a degree of inversion of the heterointerface and a contribution of tunneling in the carrier transport. The influence of these factors on photovoltaic performance of the devices under study is discussed.
Reverse-bias DLTS for investigation of the interface region in thin film solar cells
ROMEO, Alessandro;
2000-01-01
Abstract
The interface states in TCO/CdS/CdTe and ZnO/CdS/Cu(In,Ga)Se2( photovoltaic devices have been studied by use of reverse-bias transient capacitance spectroscopy. Laplace transform analysis has been used in order to enhance a spectral resolution of the technique. It is shown that the method yields useful information on the electronic characteristics of the heterointerface in the thin film solar cells. The conclusions include a degree of inversion of the heterointerface and a contribution of tunneling in the carrier transport. The influence of these factors on photovoltaic performance of the devices under study is discussed.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
