Er-doped Si-rich silica layers were obtained by reactive magnetron sputtering and both structural and room-temperature photoluminescence properties were investigated. The controlled introduction of hydrogen in the plasma was found to play a critical role in the microstructure and distribution of the Si nanograins formed after annealing. Concomitant density increase and size decrease of these nanograins mostly amorphous were noticed upon increasing the hydrogen partial pressure in the plasma. This was accompanied by a systematic enhancement of the Er emission indicating that both crystallized and amorphous silicon nanoparticles are similarly efficient sensitizers for Er emission. The lifetime of the latter was found as high as 5-6 ms. (C) 2003 American Institute of Physics.

Room-temperature 1.54 μm photoluminescence from Er-doped Si-rich silica layers obtained by reactive magnetron sputtering

Enrichi, F.;
2003-01-01

Abstract

Er-doped Si-rich silica layers were obtained by reactive magnetron sputtering and both structural and room-temperature photoluminescence properties were investigated. The controlled introduction of hydrogen in the plasma was found to play a critical role in the microstructure and distribution of the Si nanograins formed after annealing. Concomitant density increase and size decrease of these nanograins mostly amorphous were noticed upon increasing the hydrogen partial pressure in the plasma. This was accompanied by a systematic enhancement of the Er emission indicating that both crystallized and amorphous silicon nanoparticles are similarly efficient sensitizers for Er emission. The lifetime of the latter was found as high as 5-6 ms. (C) 2003 American Institute of Physics.
2003
Erbium, Silicon, energy transfer, photoluminescence, magnetron sputtering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/1064629
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