Micro-Raman scattering experiments were performed on strained silicon waveguides designed for nonlinear optical experiments. Thin stressing silicon nitride (Si3N4 or SiNx) cladding layers, deposited on a light-guiding silicon core layer, strain silicon to enable chi((2)), the second-order nonlinear susceptibility. Different deposition treatments allow varying the applied stress. The resulting strained waveguides are investigated by micro-Raman confocal spectroscopy performed on the waveguide facet. By modelling the measured Raman shifts, the local stress and strain are extracted. Thus, two-dimensional maps of the stress distribution as a function of the SiNx deposition parameters are drawn. A comparison of different samples allows underlying the non-uniformity of resulting strain.

Two-dimensional micro-Raman mapping of stress and strain distributions in strained silicon waveguides

Enrichi, F.;
2012-01-01

Abstract

Micro-Raman scattering experiments were performed on strained silicon waveguides designed for nonlinear optical experiments. Thin stressing silicon nitride (Si3N4 or SiNx) cladding layers, deposited on a light-guiding silicon core layer, strain silicon to enable chi((2)), the second-order nonlinear susceptibility. Different deposition treatments allow varying the applied stress. The resulting strained waveguides are investigated by micro-Raman confocal spectroscopy performed on the waveguide facet. By modelling the measured Raman shifts, the local stress and strain are extracted. Thus, two-dimensional maps of the stress distribution as a function of the SiNx deposition parameters are drawn. A comparison of different samples allows underlying the non-uniformity of resulting strain.
Raman mapping, Silicon, stress, strain, waveguides
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/1064601
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