CuInGaSe2/CdS thin film solar cells were prepared by using a novel precursor obtained by depositing in sequence, on top of a Mo covered soda lime glass, In2Se3, Ga2Se3 and Cu. A subsequent few minutes selenization of the precursor in a selenium vapor is sufficient to obtain a good quality CuInGaSe2 film.
CIGS thin films prepared by sputtering and selenization by using In2Se3, Ga2Se3 and Cu as sputtering targets
ROMEO, Alessandro
2010-01-01
Abstract
CuInGaSe2/CdS thin film solar cells were prepared by using a novel precursor obtained by depositing in sequence, on top of a Mo covered soda lime glass, In2Se3, Ga2Se3 and Cu. A subsequent few minutes selenization of the precursor in a selenium vapor is sufficient to obtain a good quality CuInGaSe2 film.
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