A process for the preparation of CuInGaSe2 thin film useable as an absorber layer in CuInGaSe2/CdS film deposited on as a substrate covered by a Mo film, and subsequent selenization. Before selenization, In2Se3 and Cu are mixed in a vacuum chamber in the absence of Se. The process uses a polycristalline target for the deposition of In2Se3. This process is suitable for the production -at industrial level- of CdS thin film solar cells in which the absorber layer is constituted by Cu(In,Ga)Se2.
Process for the production of Cu(In,Ga)Se2/CdS thin film solar cells
ROMEO, Alessandro;
2011-01-01
Abstract
A process for the preparation of CuInGaSe2 thin film useable as an absorber layer in CuInGaSe2/CdS film deposited on as a substrate covered by a Mo film, and subsequent selenization. Before selenization, In2Se3 and Cu are mixed in a vacuum chamber in the absence of Se. The process uses a polycristalline target for the deposition of In2Se3. This process is suitable for the production -at industrial level- of CdS thin film solar cells in which the absorber layer is constituted by Cu(In,Ga)Se2.
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