Si excess, Er content, and processing parameters have been optimized in a series of cosputtered oxide layers for maximizing Er emission and lifetime. The amount of excited Er as a function of the incident photon flux has been quantified for resonant (488 nm) and nonresonant (476 nm) excitations. Results show that a maximum of 3.5% of Er ions is excitable through the Si nanoclusters (Si-nc). This low value cannot be explained only by cooperative upconversion and/or excited state absorption. A short range (0.5 nm) distance dependent interaction model is developed that accounts for this low Er population inversion. The model points to the low density of Si-nc [(3-5)x10(17) cm(-3)] as the ultimate limiting step for indirect Er excitation in this system.
Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica
Daldosso, Nicola;
2006-01-01
Abstract
Si excess, Er content, and processing parameters have been optimized in a series of cosputtered oxide layers for maximizing Er emission and lifetime. The amount of excited Er as a function of the incident photon flux has been quantified for resonant (488 nm) and nonresonant (476 nm) excitations. Results show that a maximum of 3.5% of Er ions is excitable through the Si nanoclusters (Si-nc). This low value cannot be explained only by cooperative upconversion and/or excited state absorption. A short range (0.5 nm) distance dependent interaction model is developed that accounts for this low Er population inversion. The model points to the low density of Si-nc [(3-5)x10(17) cm(-3)] as the ultimate limiting step for indirect Er excitation in this system.
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