In this paper we describe a vacuum evaporation deposition process where the substrate temperature doesnot exceed 450°C and we study a recrystallization process which avoids the use of CdCl2, which is a carcinogenicmaterial, compared with the standard procedure. In our process CdS and CdTe are deposited at pressures of 10-6 mbar inthe same chamber by thermal evaporation and with substrate temperature of 150°C and 340°C, respectively. TheCdTe/CdS/TCO stacks are then put in a quartz chamber and, after having previously pumped the chamber down to 10-5mbar, a controlled mixture of argon and chlorine containing gas are fluxed with a substrate temperature in a rangebetween 400°C and 450°C. The morphological properties of the single layers are studied by X-ray diffraction (XRD),atomic force microscopy (AFM) and the electrical properties of the finished devices will be presented by means ofcurrent-voltage (I-V) measurements.

LOW SUBSTRATE TEMPERATURE DEPOSITED CdTe SOLAR CELLS WITH AN ALTERNATIVERECRYSTALLIZATION PROCESS

SALAVEI, Andrei;RIMMAUDO, Ivan;PICCINELLI, FABIO;Allodi, Valentina;ROMEO, Alessandro;
2011-01-01

Abstract

In this paper we describe a vacuum evaporation deposition process where the substrate temperature doesnot exceed 450°C and we study a recrystallization process which avoids the use of CdCl2, which is a carcinogenicmaterial, compared with the standard procedure. In our process CdS and CdTe are deposited at pressures of 10-6 mbar inthe same chamber by thermal evaporation and with substrate temperature of 150°C and 340°C, respectively. TheCdTe/CdS/TCO stacks are then put in a quartz chamber and, after having previously pumped the chamber down to 10-5mbar, a controlled mixture of argon and chlorine containing gas are fluxed with a substrate temperature in a rangebetween 400°C and 450°C. The morphological properties of the single layers are studied by X-ray diffraction (XRD),atomic force microscopy (AFM) and the electrical properties of the finished devices will be presented by means ofcurrent-voltage (I-V) measurements.
2011
3936338272
CdTe;
Recrystallization;
Thin films
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/367613
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