CuInGaSe2/CdS thin film solar cells were prepared by using a novel precursor obtained by depositing in sequence, on top of a Mo covered soda lime glass, In2Se3, Ga2Se3 and Cu. A subsequent few minutes selenization of the precursor in a selenium vapor is sufficient to obtain a good quality CuInGaSe2 film.

CIGS thin films prepared by sputtering and selenization by using In2Se3, Ga2Se3 and Cu as sputtering targets

ROMEO, Alessandro
2010

Abstract

CuInGaSe2/CdS thin film solar cells were prepared by using a novel precursor obtained by depositing in sequence, on top of a Mo covered soda lime glass, In2Se3, Ga2Se3 and Cu. A subsequent few minutes selenization of the precursor in a selenium vapor is sufficient to obtain a good quality CuInGaSe2 film.
9781424458905
CIGS; sputtering; thin film solar cells
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11562/367602
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